HUF75631SK8T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

39m Ω @ 5.5A, 10V

Power Dissipation-Max :

2.5W Ta

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5.5A

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Series :

UltraFET™

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.039Ohm

Pbfree Code :

yes

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

1.225pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

JEDEC-95 Code :

MS-012AA