HUF75631S3ST

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Width :

4.83mm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Element Configuration :

Single

Rise Time :

57ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Current Rating :

33A

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

120W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.04Ohm

Height :

11.33mm

Continuous Drain Current (ID) :

33A

Vgs (Max) :

±20V

FET Type :

N-Channel

Turn On Delay Time :

9.5 ns

Lead Free :

Lead Free

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Mount :

Surface Mount

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

40m Ω @ 33A, 10V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

55 ns

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 25V

Power Dissipation :

120W

Number of Elements :

1

Weight :

1.31247g

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

2

Series :

UltraFET™

Turn-Off Delay Time :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 20V

Length :

10.67mm

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing