HUF75623P3
- Mfr.Part #
- HUF75623P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 22A TO220-3
- Stock
- 445
- In Stock :
- 445
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 100V
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 22A
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 20V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Number of Elements :
- 1
- Series :
- UltraFET™
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 64m Ω @ 22A, 10V
- Power Dissipation-Max :
- 85W Tc
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 25V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain-source On Resistance-Max :
- 0.064Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Datasheets
- HUF75623P3

N-Channel Tube 64m Ω @ 22A, 10V ±20V 790pF @ 25V 52nC @ 20V 100V TO-220-3
HUF75623P3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 790pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 22A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
HUF75623P3 Features
a 100V drain to source voltage (Vdss)
HUF75623P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75623P3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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