HUF75617D3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.09Ohm

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Pbfree Code :

yes

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

16A

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 20V

Rds On (Max) @ Id, Vgs :

90m Ω @ 16A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

FET Type :

N-Channel

Series :

UltraFET™

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Finish :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Power Dissipation-Max :

64W Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V