HUF75617D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

16A

Rds On (Max) @ Id, Vgs :

90m Ω @ 16A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

64W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain-source On Resistance-Max :

0.09Ohm

Transistor Element Material :

SILICON

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

UltraFET™

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Case Connection :

DRAIN