HUF75345S3
- Mfr.Part #
- HUF75345S3
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 37,292
- In Stock :
- 37,292
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 75A, 10V
- Turn-Off Delay Time :
- 42 ns
- Turn On Delay Time :
- 14 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 1999
- Fall Time (Typ) :
- 26 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 275nC @ 20V
- Case Connection :
- DRAIN
- Power Dissipation :
- 325W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Weight :
- 1.31247g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 75A
- Series :
- UltraFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Number of Pins :
- 3
- Power Dissipation-Max :
- 325W Tc
- Current Rating :
- 75A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 7mOhm
- Voltage - Rated DC :
- 55V
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- 55V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Mount :
- Surface Mount
- Rise Time :
- 118ns
- Datasheets
- HUF75345S3

N-Channel Tape & Reel (TR) 7m Ω @ 75A, 10V ±20V 4000pF @ 25V 275nC @ 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75345S3ST Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
HUF75345S3ST Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 42 ns
HUF75345S3ST Applications
There are a lot of ON Semiconductor
HUF75345S3ST applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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