HUF75345P3
- Mfr.Part #
- HUF75345P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220-3
- Stock
- 2,914
- In Stock :
- 2,914
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Terminal Finish :
- TIN LEAD
- Power Dissipation-Max :
- 325W Tc
- Vgs (Max) :
- ±20V
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 75A, 10V
- DS Breakdown Voltage-Min :
- 55V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e0
- Drain to Source Voltage (Vdss) :
- 55V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Pin Count :
- 3
- Series :
- UltraFET™
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Drain Current-Max (Abs) (ID) :
- 75A
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 275nC @ 20V
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.007Ohm
- Pbfree Code :
- yes
- Datasheets
- HUF75345P3

N-Channel Tube 7m Ω @ 75A, 10V ±20V 4pF @ 25V 275nC @ 20V 55V TO-220-3
HUF75345P3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4pF @ 25V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
HUF75345P3 Features
a 55V drain to source voltage (Vdss)
HUF75345P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75345P3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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