HUF75345P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

JESD-609 Code :

e0

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 20V

Pin Count :

3

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.007Ohm

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Mounting Type :

Through Hole

Power Dissipation-Max :

325W Tc

Terminal Finish :

TIN LEAD

DS Breakdown Voltage-Min :

55V

Operating Mode :

ENHANCEMENT MODE

Series :

UltraFET™

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Surface Mount :

No