HUF75345G3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

UltraFET™

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

325W Tc

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

14 ns

Voltage - Rated DC :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Current Rating :

75A

Number of Pins :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 20V

ECCN Code :

EAR99

Fall Time (Typ) :

26 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Height :

20.82mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Width :

4.82mm

Transistor Application :

SWITCHING

Published :

2009

Vgs (Max) :

±20V

Resistance :

7mOhm

Threshold Voltage :

4V

Turn-Off Delay Time :

42 ns

Lead Free :

Lead Free

Length :

15.87mm

Terminal Finish :

Tin (Sn)

Rise Time :

118ns

Pbfree Code :

yes

Power Dissipation :

325W

Package / Case :

TO-247-3

Mount :

Through Hole

FET Type :

N-Channel

Weight :

6.39g

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

75A

Radiation Hardening :

No

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

55V