HUF75344S3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

55V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Series :

UltraFET™

Input Capacitance (Ciss) (Max) @ Vds :

3.2pF @ 25V

Drain-source On Resistance-Max :

0.008Ohm

Power Dissipation-Max :

285W Tc

Terminal Finish :

Tin

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 20V

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

75A Tc