HUF75344P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Pins :

3

Case Connection :

DRAIN

Power Dissipation :

285W

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Height :

16.3mm

Package / Case :

TO-220-3

Number of Elements :

1

Drain-source On Resistance-Max :

0.008Ohm

Series :

UltraFET™

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

57 ns

Factory Lead Time :

9 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Rise Time :

125ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 20V

Published :

2004

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

JESD-609 Code :

e3

Vgs (Max) :

±20V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

46 ns

Transistor Element Material :

SILICON

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

285W Tc

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

75A

Number of Terminations :

3

Width :

4.7mm

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

55V

Mount :

Through Hole

Element Configuration :

Single

Current Rating :

75A

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

55V

Length :

10.67mm