HUF75344A3

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Mfr.Part #
HUF75344A3
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 55V 75A TO3P
Stock
96,990
In Stock :
96,990

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Drain-source On Resistance-Max :
0.008Ohm
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
208nC @ 20V
Series :
UltraFET™
Rds On (Max) @ Id, Vgs :
8m Ω @ 75A, 10V
FET Type :
N-Channel
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
1153 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
288.5W Tc
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
55V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
4.855pF @ 25V
JESD-30 Code :
R-PSFM-T3
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Packaging :
Tube
Number of Elements :
1
Package / Case :
TO-3P-3, SC-65-3
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
300A
Drain Current-Max (Abs) (ID) :
75A
Pin Count :
3
DS Breakdown Voltage-Min :
55V
Qualification Status :
COMMERCIAL
Datasheets
HUF75344A3
Introducing Transistors - FETs, MOSFETs - Single onsemi HUF75344A3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, HUF75344A3 pinout, HUF75344A3 datasheet PDF, HUF75344A3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUF75344A3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUF75344A3


N-Channel Tube 8m Ω @ 75A, 10V ±20V 4.855pF @ 25V 208nC @ 20V 55V TO-3P-3, SC-65-3

HUF75344A3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1153 mJ.The maximum input capacitance of this device is 4.855pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

HUF75344A3 Features


the avalanche energy rating (Eas) is 1153 mJ
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


HUF75344A3 Applications


There are a lot of Rochester Electronics, LLC
HUF75344A3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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