HUF75344A3

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Mfr.Part #
HUF75344A3
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 55V 75A TO3P
Stock
96,990
In Stock :
96,990

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Packaging :
Tube
Drain to Source Voltage (Vdss) :
55V
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Number of Elements :
1
DS Breakdown Voltage-Min :
55V
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.008Ohm
Series :
UltraFET™
Pulsed Drain Current-Max (IDM) :
300A
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Surface Mount :
No
Reach Compliance Code :
Unknown
Package / Case :
TO-3P-3, SC-65-3
Power Dissipation-Max :
288.5W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Avalanche Energy Rating (Eas) :
1153 mJ
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
75A
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
208nC @ 20V
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
8m Ω @ 75A, 10V
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
4.855pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
Datasheets
HUF75344A3
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor HUF75344A3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Mounting Type:Through Hole, HUF75344A3 pinout, HUF75344A3 datasheet PDF, HUF75344A3 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor HUF75344A3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor HUF75344A3


N-Channel Tube 8m Ω @ 75A, 10V ±20V 4.855pF @ 25V 208nC @ 20V 55V TO-3P-3, SC-65-3

HUF75344A3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1153 mJ.The maximum input capacitance of this device is 4.855pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

HUF75344A3 Features


the avalanche energy rating (Eas) is 1153 mJ
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


HUF75344A3 Applications


There are a lot of Rochester Electronics, LLC
HUF75344A3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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