HUF75344A3
- Mfr.Part #
- HUF75344A3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO3P
- Stock
- 96,990
- In Stock :
- 96,990
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 55V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 55V
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.008Ohm
- Series :
- UltraFET™
- Pulsed Drain Current-Max (IDM) :
- 300A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation-Max :
- 288.5W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 1153 mJ
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 75A
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 208nC @ 20V
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 75A, 10V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.855pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- HUF75344A3

N-Channel Tube 8m Ω @ 75A, 10V ±20V 4.855pF @ 25V 208nC @ 20V 55V TO-3P-3, SC-65-3
HUF75344A3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1153 mJ.The maximum input capacitance of this device is 4.855pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
HUF75344A3 Features
the avalanche energy rating (Eas) is 1153 mJ
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)
HUF75344A3 Applications
There are a lot of Rochester Electronics, LLC
HUF75344A3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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