HUF75339P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

75A

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Turn-Off Delay Time :

20 ns

Height :

9.4mm

Length :

10.67mm

Number of Terminations :

3

Drain to Source Breakdown Voltage :

55V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Case Connection :

DRAIN

Rise Time :

60ns

Factory Lead Time :

9 Weeks

Mount :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Current Rating :

75A

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

Series :

UltraFET™

Fall Time (Typ) :

25 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Voltage - Rated DC :

55V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

200W Tc

RoHS Status :

ROHS3 Compliant

Resistance :

12mOhm

Threshold Voltage :

4V

Width :

4.83mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Pins :

3

Power Dissipation :

200W

Packaging :

Tube

Lead Free :

Lead Free

Contact Plating :

Tin

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Number of Elements :

1

Published :

2002