HUF75333S3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Series :

UltraFET™

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 20V

Pbfree Code :

yes

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

16m Ω @ 66A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.3pF @ 25V

Drain Current-Max (Abs) (ID) :

56A

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.016Ohm

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

JESD-609 Code :

e3

Power Dissipation-Max :

150W Tc

Surface Mount :

No

Number of Terminations :

3

Case Connection :

DRAIN

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Transistor Element Material :

SILICON