HUF75333S3
- Mfr.Part #
- HUF75333S3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 66A I2PAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 150W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 20V
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.3pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 56A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- FET Type :
- N-Channel
- Packaging :
- Tube
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 66A Tc
- Drain to Source Voltage (Vdss) :
- 55V
- Number of Elements :
- 1
- Series :
- UltraFET™
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 55V
- Surface Mount :
- No
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 66A, 10V
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.016Ohm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- HUF75333S3

N-Channel Tube 16m Ω @ 66A, 10V ±20V 1.3pF @ 25V 85nC @ 20V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
HUF75333S3 Overview
The maximum input capacitance of this device is 1.3pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 56A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
HUF75333S3 Features
a 55V drain to source voltage (Vdss)
HUF75333S3 Applications
There are a lot of Rochester Electronics, LLC
HUF75333S3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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