HUF75333P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Package / Case :

TO-220-3

Rds On Max :

16 mΩ

Drain to Source Resistance :

16mOhm

Drain to Source Voltage (Vdss) :

55V

Voltage - Rated DC :

55V

Packaging :

Tube

Fall Time (Typ) :

25 ns

Supplier Device Package :

TO-220-3

Threshold Voltage :

4V

Power Dissipation :

150W

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

55ns

Series :

UltraFET™

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 20V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Input Capacitance :

1.3nF

Element Configuration :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

16mOhm @ 66A, 10V

Published :

2002

Mounting Type :

Through Hole

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Number of Elements :

1

Max Operating Temperature :

175°C

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

66A

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

11 ns

Lead Free :

Lead Free

Current Rating :

60A