HUF75332S3ST

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Mfr.Part #
HUF75332S3ST
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 60A D2PAK
Stock
86,009
In Stock :
86,009

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Min Operating Temperature :
-55°C
Series :
UltraFET™
Element Configuration :
Single
FET Type :
N-Channel
Drain to Source Resistance :
22mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
55V
Supplier Device Package :
D2PAK (TO-263AB)
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
55V
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 20V
Max Operating Temperature :
175°C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current Rating :
60A
Mount :
Surface Mount
RoHS Status :
RoHS Compliant
Continuous Drain Current (ID) :
60A
Published :
2005
Fall Time (Typ) :
45 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Input Capacitance :
1.3nF
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Rds On Max :
19 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
19mOhm @ 60A, 10V
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
50 ns
Voltage - Rated DC :
55V
Rise Time :
90ns
Vgs (Max) :
±20V
Power Dissipation :
145W
Power Dissipation-Max :
145W Tc
Datasheets
HUF75332S3ST
Introducing Transistors - FETs, MOSFETs - Single onsemi HUF75332S3ST from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, HUF75332S3ST pinout, HUF75332S3ST datasheet PDF, HUF75332S3ST amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUF75332S3ST ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUF75332S3ST


N-Channel Tape & Reel (TR) 19mOhm @ 60A, 10V ±20V 1300pF @ 25V 85nC @ 20V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HUF75332S3ST Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 22mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

HUF75332S3ST Features


a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 22mOhm
a 55V drain to source voltage (Vdss)


HUF75332S3ST Applications


There are a lot of ON Semiconductor
HUF75332S3ST applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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