HUF75332S3ST
- Mfr.Part #
- HUF75332S3ST
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 60A D2PAK
- Stock
- 86,009
- In Stock :
- 86,009
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Series :
- UltraFET™
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 22mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 55V
- Supplier Device Package :
- D2PAK (TO-263AB)
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 55V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 20V
- Max Operating Temperature :
- 175°C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 60A
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 60A
- Published :
- 2005
- Fall Time (Typ) :
- 45 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Input Capacitance :
- 1.3nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Rds On Max :
- 19 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 19mOhm @ 60A, 10V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 50 ns
- Voltage - Rated DC :
- 55V
- Rise Time :
- 90ns
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 145W
- Power Dissipation-Max :
- 145W Tc
- Datasheets
- HUF75332S3ST

N-Channel Tape & Reel (TR) 19mOhm @ 60A, 10V ±20V 1300pF @ 25V 85nC @ 20V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75332S3ST Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 22mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
HUF75332S3ST Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 22mOhm
a 55V drain to source voltage (Vdss)
HUF75332S3ST Applications
There are a lot of ON Semiconductor
HUF75332S3ST applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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