HUF75332S3S

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

145W

Lead Free :

Lead Free

Input Capacitance :

1.3nF

Drain to Source Resistance :

22mOhm

Continuous Drain Current (ID) :

60A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

19mOhm @ 60A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

UltraFET™

Rise Time :

90ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Fall Time (Typ) :

45 ns

Mount :

Surface Mount

Turn-Off Delay Time :

50 ns

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Voltage - Rated DC :

55V

Element Configuration :

Single

Number of Pins :

3

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

D2PAK (TO-263AB)

Published :

2005

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 20V

RoHS Status :

RoHS Compliant

Current Rating :

60A

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Rds On Max :

19 mΩ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Power Dissipation-Max :

145W Tc