HUF75332P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

145W Tc

Factory Lead Time :

9 Weeks

Turn On Delay Time :

9 ns

Element Configuration :

Single

Series :

UltraFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Weight :

1.8g

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2005

Turn-Off Delay Time :

50 ns

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V

Current Rating :

60A

Number of Pins :

3

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

JESD-609 Code :

e3

Number of Elements :

1

Voltage - Rated DC :

55V

Rise Time :

90ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

19m Ω @ 60A, 10V

Drain to Source Breakdown Voltage :

55V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 20V

Power Dissipation :

145W

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Fall Time (Typ) :

45 ns