HUF75329S3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain-source On Resistance-Max :

0.025Ohm

Vgs (Max) :

±20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 20V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

24m Ω @ 49A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Surface Mount :

No

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

42A

Case Connection :

DRAIN

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

49A Tc

DS Breakdown Voltage-Min :

55V

Series :

UltraFET™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Power Dissipation-Max :

128W Tc

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-262AA

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

Not Applicable

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1.06pF @ 25V