HUF75329D3S
- Mfr.Part #
- HUF75329D3S
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 20A TO252AA
- Stock
- 17,224
- In Stock :
- 17,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 33 ns
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 20A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- UltraFET™
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 20V
- Turn On Delay Time :
- 7 ns
- Drain to Source Breakdown Voltage :
- 55V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 25V
- JEDEC-95 Code :
- TO-252AA
- Resistance :
- 26mOhm
- Vgs (Max) :
- ±20V
- Published :
- 2002
- Height :
- 7.49mm
- Terminal Form :
- Gull wing
- Weight :
- 260.37mg
- Current Rating :
- 20A
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 128W
- Mount :
- Surface Mount
- Width :
- 2.39mm
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 20A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 4 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Rise Time :
- 30ns
- Length :
- 6.73mm
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 128W Tc
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Voltage - Rated DC :
- 55V
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- HUF75329D3S

N-Channel Tape & Reel (TR) 26m Ω @ 20A, 10V ±20V 1060pF @ 25V 65nC @ 20V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75329D3ST Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1060pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
HUF75329D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 10 ns
HUF75329D3ST Applications
There are a lot of ON Semiconductor
HUF75329D3ST applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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