HUF75329D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Fall Time (Typ) :

33 ns

Number of Terminations :

2

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

128W Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Width :

2.39mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

10 ns

Height :

7.49mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

26m Ω @ 20A, 10V

Resistance :

26mOhm

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Voltage - Rated DC :

55V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

Number of Elements :

1

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Current Rating :

20A

Lead Free :

Lead Free

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

20A

Rise Time :

30ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Power Dissipation :

128W

Series :

UltraFET™