HUF75321S3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

55V

Fall Time (Typ) :

66 ns

Drain to Source Breakdown Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Input Capacitance :

680pF

Rds On (Max) @ Id, Vgs :

34mOhm @ 35A, 10V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 20V

Supplier Device Package :

D2PAK (TO-263AB)

Lead Free :

Lead Free

Rds On Max :

34 mΩ

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

34mOhm

Turn-Off Delay Time :

47 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Current Rating :

35A

Published :

2002

Continuous Drain Current (ID) :

35A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

93W

Power Dissipation-Max :

93W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

UltraFET™

FET Type :

N-Channel

Rise Time :

55ns

RoHS Status :

RoHS Compliant

Packaging :

Tube

Element Configuration :

Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

55V

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB