HUF75321S3S
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- Mfr.Part #
- HUF75321S3S
- Manufacturer
- Harris Corporation
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 35A D2PAK
- Stock
- 1,018
- In Stock ：
- 1,018
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 55V
- Series :
- UltraFET™
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Supplier Device Package :
- D2PAK (TO-263AB)
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 66 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 93W
- Published :
- 2002
- Drain to Source Resistance :
- 34mOhm
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 35A, 10V
- Continuous Drain Current (ID) :
- 35A
- Number of Pins :
- 3
- Rds On Max :
- 34 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 20V
- Rise Time :
- 55ns
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 55V
- Input Capacitance :
- 680pF
- Current Rating :
- 35A
- Drain to Source Breakdown Voltage :
- 55V
- Power Dissipation-Max :
- 93W Tc
- Turn-Off Delay Time :
- 47 ns
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- HUF75321S3S
N-Channel Tube 34mOhm @ 35A, 10V ±20V 680pF @ 25V 44nC @ 20V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF75321S3S Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 680pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [47 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 34mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
HUF75321S3S Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 47 ns
single MOSFETs transistor is 34mOhm
a 55V drain to source voltage (Vdss)
HUF75321S3S Applications
There are a lot of ON Semiconductor
HUF75321S3S applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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