HUF75321P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Case Connection :

DRAIN

Contact Plating :

Tin

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Vgs (Max) :

±20V

Height :

16.3mm

Weight :

1.8g

Turn On Delay Time :

11 ns

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Length :

10.67mm

Published :

2002

Series :

UltraFET™

Power Dissipation-Max :

93W Tc

FET Type :

N-Channel

Package / Case :

TO-220-3

Power Dissipation :

93W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Element Configuration :

Single

Number of Elements :

1

Pbfree Code :

yes

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Packaging :

Tube

Fall Time (Typ) :

66 ns

Rise Time :

55ns

Mount :

Through Hole

Current Rating :

35A

Turn-Off Delay Time :

47 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

34m Ω @ 35A, 10V

Resistance :

34mOhm

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

35A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)