HUF75321D3
- Mfr.Part #
- HUF75321D3
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 20A IPAK
- Stock
- 26,317
- In Stock :
- 26,317
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 20A
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Series :
- UltraFET™
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 55V
- Power Dissipation :
- 93W
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-252AA
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Fall Time (Typ) :
- 66 ns
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 55ns
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 20V
- Weight :
- 260.37mg
- Drain to Source Breakdown Voltage :
- 55V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 36mOhm
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 47 ns
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 20A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Published :
- 2002
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Power Dissipation-Max :
- 93W Tc
- Continuous Drain Current (ID) :
- 20A
- Datasheets
- HUF75321D3

N-Channel Tape & Reel (TR) 36m Ω @ 20A, 10V ±20V 680pF @ 25V 44nC @ 20V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75321D3ST Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 680pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 47 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
HUF75321D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 47 ns
HUF75321D3ST Applications
There are a lot of ON Semiconductor
HUF75321D3ST applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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