HUF75321D3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Resistance :

36mOhm

JESD-609 Code :

e3

Weight :

260.37mg

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Series :

UltraFET™

Rise Time :

55ns

Number of Pins :

3

Transistor Application :

SWITCHING

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

47 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Fall Time (Typ) :

66 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Rds On (Max) @ Id, Vgs :

36m Ω @ 20A, 10V

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Current Rating :

20A

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Published :

2002

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Continuous Drain Current (ID) :

20A

Lead Free :

Lead Free

Number of Elements :

1

Power Dissipation :

93W

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

55V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Mount :

Surface Mount

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

93W Tc

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing