HUF75309P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Voltage - Rated DC :

55V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

19A

Packaging :

Tube

Fall Time (Typ) :

30 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

350pF

Rds On Max :

70 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

55W Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

70mOhm @ 19A, 10V

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 20V

Number of Elements :

1

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Lead Free :

Lead Free

Turn-Off Delay Time :

24 ns

Max Operating Temperature :

175°C

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Series :

UltraFET™

Operating Temperature :

-55°C~175°C TJ

Current Rating :

19A

Element Configuration :

Single

Published :

2002

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

39ns

FET Type :

N-Channel

Power Dissipation :

55W

Drain to Source Resistance :

70mOhm