HUF75309P3
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- Mfr.Part #
- HUF75309P3
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 19A TO220-3
- Stock
- 26,719
- In Stock ：
- 26,719
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 55V
- Power Dissipation-Max :
- 55W Tc
- Input Capacitance :
- 350pF
- Current Rating :
- 19A
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 39ns
- Fall Time (Typ) :
- 30 ns
- Series :
- UltraFET™
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 55V
- Drain to Source Resistance :
- 70mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 19A
- Max Operating Temperature :
- 175°C
- Number of Elements :
- 1
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Power Dissipation :
- 55W
- Turn-Off Delay Time :
- 24 ns
- Rds On (Max) @ Id, Vgs :
- 70mOhm @ 19A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 20V
- Lead Free :
- Lead Free
- Rds On Max :
- 70 mΩ
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Supplier Device Package :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Published :
- 2002
- Datasheets
- HUF75309P3
N-Channel Tube 70mOhm @ 19A, 10V ±20V 350pF @ 25V 24nC @ 20V 55V TO-220-3
HUF75309P3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 19A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 70mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
HUF75309P3 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 70mOhm
a 55V drain to source voltage (Vdss)
HUF75309P3 Applications
There are a lot of ON Semiconductor
HUF75309P3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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