HS8MA2TCR1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Manufacturer :

Rohm Semiconductor

MSL :

-

Number of Channels :

2 Channel

Package Type :

DFN3333-9DC

Qualification :

-

Channel Mode :

Enhancement

Brand :

Rohm Semiconductor

Subcategory :

MOSFETs

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 10V, 365pF @ 10V

Rise Time :

8 ns, 16.8 ns

Current - Continuous Drain (Id) @ 25°C :

5A (Ta), 7A (Ta)

Transistor Type :

Power MOSFET

Technology :

Si

Product Type :

MOSFET

Packaging :

Cut Tape

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Continuous Drain Current Id :

7A

Channel Type :

N, P

Supplier Device Package :

DFN3333-9DC

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V, 8.4nC @ 10V

Series :

-

Minimum Operating Temperature :

- 55 C

FET Feature :

Standard

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

RoHS :

Details

Product Status :

Active

Operating Temperature :

150°C (TJ)

Power - Max :

2W (Ta)

Package / Case :

HSML3333L-9

Transistor Polarity :

N and P Channel

FET Type :

N and P-Channel

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V

Number of Elements per Chip :

2

Configuration :

Dual

Pin Count :

9