HGT1S3N60A4DS9A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Power - Max :

70W

Collector Emitter Saturation Voltage :

2V

Supplier Device Package :

TO-263AB

Packaging :

Tube

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

17A

Element Configuration :

Single

Power Dissipation :

70W

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

600V

Max Collector Current :

17A

Collector Emitter Voltage (VCEO) :

600V

Switching Energy :

37μJ (on), 25μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

19 ns

Number of Pins :

3

Min Operating Temperature :

-55°C

Td (on/off) @ 25°C :

6ns/73ns

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 3A

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate Charge :

21nC

Test Condition :

390V, 3A, 50Ohm, 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Pulsed (Icm) :

40A

Input Type :

Standard

Max Power Dissipation :

70W