HGT1S12N60B3

Manufacturer :

Harris Corporation

Product Category :

Transistors - IGBTs - Single

Fall Time-Max (tf) :

175ns

Transistor Element Material :

SILICON

Configuration :

Single

Turn On Time :

22 ns

Collector Current-Max (IC) :

27A

Turn Off Time-Nom (toff) :

280 ns

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

104W

Operating Temperature (Max) :

150°C

Transistor Application :

Motor Control

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Case Connection :

COLLECTOR

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Gate-Emitter Thr Voltage-Max :

6V

Number of Terminals :

2

Collector-Emitter Voltage-Max :

600V

Additional Feature :

LOW CONDUCTION LOSS, ULTRA FAST SWITCHING

Gate-Emitter Voltage-Max :

20V

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e0