HGT1S12N60A4DS

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Mfr.Part #
HGT1S12N60A4DS
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT, 54A, 600V, N-CHANNEL, TO-2
Stock
8,168
In Stock :
8,168

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - IGBTs - Single
Gate Charge :
78nC
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
54A
Weight :
1.31247g
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Number of Terminations :
2
Terminal Form :
Gull wing
Pbfree Code :
yes
Turn On Time :
33 ns
Radiation Hardening :
No
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
30
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
2.7V
HTS Code :
8541.29.00.95
Base Part Number :
HGT1S12N60
Td (on/off) @ 25°C :
17ns/96ns
Reverse Recovery Time :
30ns
Polarity/Channel Type :
N-Channel
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
600V
Number of Pins :
3
Transistor Application :
POWER CONTROL
Input Type :
Standard
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 day ago)
Lead Free :
Lead Free
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn-Off Delay Time :
96 μs
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
167W
Switching Energy :
55µJ (on), 50µJ (off)
Test Condition :
390V, 12A, 10 Ω, 15V
Packaging :
Tube
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Max Power Dissipation :
167W
Turn On Delay Time :
17 µs
Element Configuration :
Single
Current - Collector Pulsed (Icm) :
96A
Additional Feature :
LOW CONDUCTION LOSS
Turn Off Time-Nom (toff) :
180 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
600V
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Datasheets
HGT1S12N60A4DS
Introducing Transistors - IGBTs - Single Fairchild Semiconductor HGT1S12N60A4DS from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Base Part Number:HGT1S12N60, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, HGT1S12N60A4DS pinout, HGT1S12N60A4DS datasheet PDF, HGT1S12N60A4DS amp .Beyond Transistors - IGBTs - Single Fairchild Semiconductor HGT1S12N60A4DS ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor HGT1S12N60A4DS


HGT1S12N60A4DS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

HGT1S12N60A4DS  Description

The HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. TheIGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where lowconduction losses are essential. This device has been optimized for high-frequency switch mode power s



HGT1S12N60A4DS  Features

>100kHz Operation  390V, 12A

200kHz Operation  390V, 9A

600V Switching SOA Capability

Typical Fall Tim 70nsatTJ= 1259C

Low Conduction L oss

Temperature Compensating SABERTH Model


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