HGT1S2N120CN
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- Mfr.Part #
- HGT1S2N120CN
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL IGBT
- Stock
- 16,895
- In Stock ：
- 16,895
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 96μJ (on), 355μJ (off)
- Mounting Type :
- Through Hole
- Current Rating :
- 13A
- Max Collector Current :
- 13A
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Pulsed (Icm) :
- 20A
- Element Configuration :
- Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Voltage - Rated DC :
- 1.2kV
- Max Power Dissipation :
- 104W
- Power Dissipation :
- 104W
- Test Condition :
- 960V, 2.6A, 51 Ω, 15V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Saturation Voltage :
- 2.05V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- IGBT Type :
- NPT
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 2.6A
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- RoHS Status :
- RoHS Compliant
- Gate Charge :
- 30nC
- Mount :
- Through Hole
- Td (on/off) @ 25°C :
- 25ns/205ns
- Input Type :
- Standard
- Datasheets
- HGT1S2N120CN
HGT1S2N120CN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGT1S2N120CN Description
Devices with Non-Punch Through (NPT) IGBT designs include the HGT1S2N120CN. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET.
HGT1S2N120CN Features
? 360ns of Typical Fall Time at TJ = 150°C
? Rating for Short Circuits
? Minimal Conductance Loss
? Rated Avalanche
HGT1S2N120CN Applications
Switching applications
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