FZT758TC
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- Mfr.Part #
- FZT758TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A SOT223-3
- Stock
- 49,985
- In Stock ：
- 49,985
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- Transition Frequency :
- 50MHz
- Base Part Number :
- FZT758
- Collector Emitter Voltage (VCEO) :
- 500mV
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PDSO-G4
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 10V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -400V
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- MATTE TIN
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.29.00.75
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Qualification Status :
- Not Qualified
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -400V
- Collector Emitter Saturation Voltage :
- -500mV
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Datasheets
- FZT758TC
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT758TC Overview
DC current gain in this device equals 40 @ 200mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 500mA volts.
FZT758TC Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
FZT758TC Applications
There are a lot of Diodes Incorporated
FZT758TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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