FZT755TC
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- Mfr.Part #
- FZT755TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A SOT223-3
- Stock
- 37,925
- In Stock ：
- 37,925
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 500mV
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Voltage - Rated DC :
- -150V
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 1A
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -150V
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Current Rating :
- -1A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- MATTE TIN
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 150V
- Transition Frequency :
- 30MHz
- REACH SVHC :
- No SVHC
- Current - Collector (Ic) (Max) :
- 1A
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -500mV
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- -1A
- Gain Bandwidth Product :
- 30MHz
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Base Part Number :
- FZT755
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FZT755TC
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT755TC Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 200mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 1A volts is possible.
FZT755TC Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 30MHz
FZT755TC Applications
There are a lot of Diodes Incorporated
FZT755TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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