FZT749TC
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- Mfr.Part #
- FZT749TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Collector Emitter Saturation Voltage :
- -400mV
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 25V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2W
- hFE Min :
- 70
- JESD-609 Code :
- e3
- Transition Frequency :
- 160MHz
- Frequency :
- 160MHz
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 35V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Height :
- 1.65mm
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Continuous Collector Current :
- -3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 160MHz
- Current Rating :
- -3A
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 3.7mm
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FZT749
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Voltage - Rated DC :
- -25V
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- FZT749TC
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT749TC Overview
In this device, the DC current gain is 100 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 300mA, 3A.Maintaining the continuous collector voltage at -3A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).160MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
FZT749TC Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TC Applications
There are a lot of Diodes Incorporated
FZT749TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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