FQU7P06TU
- Mfr.Part #
- FQU7P06TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.4A IPAK
- Stock
- 40,500
- In Stock :
- 40,500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Series :
- QFET®
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- JESD-30 Code :
- R-PSIP-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 60V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.451Ohm
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Drain Current-Max (Abs) (ID) :
- 5.4A
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±25V
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 21.6A
- Power Dissipation-Max :
- 2.5W Ta 28W Tc
- Surface Mount :
- No
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 60V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 451m Ω @ 2.7A, 10V
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- FQU7P06TU

P-Channel Tube 451m Ω @ 2.7A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
FQU7P06TU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.A device's maximum input capacitance is 295pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 21.6A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQU7P06TU Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 21.6A.
a 60V drain to source voltage (Vdss)
FQU7P06TU Applications
There are a lot of Rochester Electronics, LLC
FQU7P06TU applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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