FQU7P06TU
- Mfr.Part #
- FQU7P06TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.4A IPAK
- Stock
- 40,500
- In Stock :
- 40,500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 21.6A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.5W Ta 28W Tc
- Series :
- QFET®
- DS Breakdown Voltage-Min :
- 60V
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 5.4A
- Drain-source On Resistance-Max :
- 0.451Ohm
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 451m Ω @ 2.7A, 10V
- Vgs (Max) :
- ±25V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- FET Type :
- P-Channel
- Datasheets
- FQU7P06TU
FQU7P06TU Documents

P-Channel Tube 451m Ω @ 2.7A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
FQU7P06TU Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.A device's maximum input capacitance is 295pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5.4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 21.6A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQU7P06TU Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 21.6A.
a 60V drain to source voltage (Vdss)
FQU7P06TU Applications
There are a lot of Rochester Electronics, LLC
FQU7P06TU applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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