FQU7N20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Surface Mount :

No

DS Breakdown Voltage-Min :

200V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Drain-source On Resistance-Max :

0.69Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.65A, 10V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

5.3A

Number of Elements :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Vgs (Max) :

±30V

Number of Terminations :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 45W Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Pulsed Drain Current-Max (IDM) :

21A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

73 mJ