FQU7P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

90 mJ

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Unknown

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

21.6A

Mounting Type :

Through Hole

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60V

Pin Count :

3

Pbfree Code :

yes

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 28W Tc

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.451Ohm

Rds On (Max) @ Id, Vgs :

451m Ω @ 2.7A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Drain Current-Max (Abs) (ID) :

5.4A

Transistor Application :

SWITCHING

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA