FQU7N20TU
- Mfr.Part #
- FQU7N20TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.3A IPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Tc
- Pulsed Drain Current-Max (IDM) :
- 21A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- Not Applicable
- DS Breakdown Voltage-Min :
- 200V
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 5.3A
- JESD-30 Code :
- R-PSIP-T3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pin Count :
- 3
- Series :
- QFET®
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.69Ohm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 690m Ω @ 2.65A, 10V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Datasheets
- FQU7N20TU

N-Channel Tube 690m Ω @ 2.65A, 10V ±30V 400pF @ 25V 10nC @ 10V 200V TO-251-3 Short Leads, IPak, TO-251AA
FQU7N20TU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 73 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 400pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [5.3A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 21A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQU7N20TU Features
the avalanche energy rating (Eas) is 73 mJ
based on its rated peak drain current 21A.
a 200V drain to source voltage (Vdss)
FQU7N20TU Applications
There are a lot of Rochester Electronics, LLC
FQU7N20TU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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