FQNL2N50BTA

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Length :

4.9mm

Continuous Drain Current (ID) :

350mA

Height :

8mm

Power Dissipation-Max :

1.5W Tc

Turn On Delay Time :

6 ns

Terminal Position :

BOTTOM

Number of Terminations :

3

Series :

QFET®

Weight :

371.1027mg

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Box (TB)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

10 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Rise Time :

25ns

Mounting Type :

Through Hole

Number of Elements :

1

Published :

2001

Voltage - Rated DC :

500V

Fall Time (Typ) :

25 ns

Mount :

Through Hole

Current Rating :

350mA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 175mA, 10V

Width :

3.9mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

350mA Tc

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

1.5W

Lead Free :

Lead Free