FQNL2N50BBU
- Mfr.Part #
- FQNL2N50BBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 350MA TO92-3
- Stock
- 43,021
- In Stock :
- 43,021
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tc
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 1.4A
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Series :
- QFET®
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 500V
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 5.3 Ω @ 175mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 0.35A
- Power Dissipation-Max :
- 1.5W Tc
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Datasheets
- FQNL2N50BBU

N-Channel Bulk 5.3 Ω @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V 500V TO-226-3, TO-92-3 Long Body (Formed Leads)
FQNL2N50BBU Overview
The maximum input capacitance of this device is 230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 0.35A.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.4A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQNL2N50BBU Features
based on its rated peak drain current 1.4A.
a 500V drain to source voltage (Vdss)
FQNL2N50BBU Applications
There are a lot of Rochester Electronics, LLC
FQNL2N50BBU applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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