FQNL2N50BBU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

FET Type :

N-Channel

Mounting Type :

Through Hole

Series :

QFET®

Number of Terminations :

3

Pin Count :

3

Qualification Status :

COMMERCIAL

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

1.4A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 175mA, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

350mA Tc

JESD-30 Code :

O-PBCY-T3

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.35A

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Surface Mount :

No

Number of Elements :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

1.5W Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Pbfree Code :

yes