FQNL1N50BTA

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Tc

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

500V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Packaging :

Tape and Box (TB)

Pbfree Code :

yes

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Peak Reflow Temperature (Cel) :

Not Applicable

Series :

QFET®

JESD-30 Code :

O-PBCY-T3

Reach Compliance Code :

Unknown

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

9Ohm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

1.08A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9 Ω @ 135mA, 10V

Current - Continuous Drain (Id) @ 25°C :

270mA Tc

Drain to Source Voltage (Vdss) :

500V

Drain Current-Max (Abs) (ID) :

0.27A

RoHS Status :

ROHS3 Compliant