FQN1N60CTA

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13 ns

Power Dissipation-Max :

1W Ta 3W Tc

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Published :

2013

Height :

5.33mm

Packaging :

Tape and Box (TB)

Weight :

240mg

Resistance :

11.5Ohm

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

FET Type :

N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Length :

5.2mm

Turn On Delay Time :

7 ns

Fall Time (Typ) :

27 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

21ns

Series :

QFET®

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 150mA, 10V

JESD-609 Code :

e3

Mount :

Through Hole

Feedback Cap-Max (Crss) :

6 pF

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

300mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Power Dissipation :

1W

Width :

4.19mm

Terminal Finish :

Tin (Sn)