FQN1N60CBU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.3A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Feedback Cap-Max (Crss) :

6 pF

Surface Mount :

No

Mounting Type :

Through Hole

Pin Count :

3

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

O-PBCY-T3

Terminal Position :

BOTTOM

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Packaging :

Bulk

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

1W Ta 3W Tc

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 150mA, 10V