FQN1N50CBU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

40 pF

Drain-source On Resistance-Max :

6Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

O-PBCY-T3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±30V

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Power Dissipation-Max :

890mW Ta 2.08W Tc

Current - Continuous Drain (Id) @ 25°C :

380mA Tc

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

FET Type :

N-Channel

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Terminations :

3

Surface Mount :

No

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

0.38A

Reach Compliance Code :

Unknown

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)