FQN1N50CBU
- Mfr.Part #
- FQN1N50CBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 380MA TO92-3
- Stock
- 4,447
- In Stock :
- 4,447
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 190mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 380mA Tc
- Terminal Position :
- BOTTOM
- Input Capacitance (Ciss) (Max) @ Vds :
- 195pF @ 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Drain-source On Resistance-Max :
- 6Ohm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 500V
- JESD-30 Code :
- O-PBCY-T3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Feedback Cap-Max (Crss) :
- 40 pF
- Power Dissipation-Max :
- 890mW Ta 2.08W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 10V
- Transistor Element Material :
- SILICON
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 0.38A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Series :
- QFET®
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Datasheets
- FQN1N50CBU
FQN1N50CBU Documents

N-Channel Bulk 6 Ω @ 190mA, 10V ±30V 195pF @ 25V 6.4nC @ 10V 500V TO-226-3, TO-92-3 (TO-226AA)
FQN1N50CBU Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 195pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 0.38A.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQN1N50CBU Features
a 500V drain to source voltage (Vdss)
FQN1N50CBU Applications
There are a lot of Rochester Electronics, LLC
FQN1N50CBU applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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