FQN1N60CTA

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Length :

5.2mm

Height :

5.33mm

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Feedback Cap-Max (Crss) :

6 pF

Weight :

240mg

ECCN Code :

EAR99

Mount :

Through Hole

Resistance :

11.5Ohm

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Terminal Position :

BOTTOM

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

27 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

300mA

Mounting Type :

Through Hole

Power Dissipation :

1W

Number of Elements :

1

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 150mA, 10V

Published :

2013

Lead Free :

Lead Free

Number of Terminations :

3

Width :

4.19mm

JESD-609 Code :

e3

Threshold Voltage :

4V

Element Configuration :

Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Rise Time :

21ns

Packaging :

Tape and Box (TB)

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1W Ta 3W Tc

Turn-Off Delay Time :

13 ns

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

7 ns

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V